IXFX94N50P2 IXYS, IXFX94N50P2 Datasheet - Page 4

• Manufacturer Part Number: IXFX94N50P2
• Description: MOSFET N-CH 500V 94A PLUS247
• Manufacturer: IXYS
• Series: PolarP2™ HiPerFET™r
• Type: PolarP2 HiPerFETr

Specifications of IXFX94N50P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 13700pF @ 25V
• Power - Max: 1300W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Product: MOSFET Gate Drivers
• Rise Time: 34 ns
• Fall Time: 11 ns
• Supply Current: 94 A
• Maximum Power Dissipation: 1300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 67 ns
• Maximum Turn-on Delay Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 94 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 94
• Rds(on), Max, Tj=25°c, (?): 0.055
• Ciss, Typ, (pf): 14200
• Qg, Typ, (nc): 228
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1300
• Rthjc, Max, (ºc/w): 0.096
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
300
250
200
150
100
120
100
100
50
80
60
40
20
10
0
0
0.3
3.0
0
f
0.4
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
0.6
4.0
10
T
Fig. 7. Input Admittance
J
0.7
Fig. 11. Capacitance
= 125ºC
4.5
15
0.8
V
V
V
SD
DS
GS
0.9
5.0
- Volts
- Volts
20
- Volts
T
J
= 125ºC
1.0
T
- 40ºC
J
25ºC
5.5
25
= 25ºC
1.1
C rss
C iss
C oss
1.2
6.0
30
1.3
6.5
35
1.4
1.5
7.0
40
1000
100
140
120
100
0.1
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
10
DS
= 150ºC
R
= 25ºC
= 47A
= 10mA
DS(on)
= 250V
Fig. 12. Forward-Bias Safe Operating Area
20
Limit
50
30
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
Q
100
G
50
- NanoCoulombs
I
D
V
- Amperes
DS
100
60
- Volts
70
150
IXFK94N50P2
IXFX94N50P2
80
T
J
= - 40ºC
90
25ºC
125ºC
200
100
100µs
1ms
10ms
100ms
110
1,000
250
120