IXFK44N80P IXYS, IXFK44N80P Datasheet
IXFK44N80P
Manufacturer Part Number
IXFK44N80P
Description
MOSFET N-CH 800V 44A TO-264
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFK44N80P.pdf
(4 pages)
Specifications of IXFK44N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
198nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
1040W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
44 A
Power Dissipation
1200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
198
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1200
Rthjc, Max, (ºc/w)
0.12
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK44N80P
Manufacturer:
PANASONIC
Quantity:
10 000
Part Number:
IXFK44N80P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
SOLD
C
DSS
DGR
GS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
(IXFK)
(IXFX)
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 800 μA
= 8 mA
= 0.5 I
G
, V
= 10 Ω
DS
= 0
D25
(IXFK)
(IXFX)
GS
, Note 1
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXFK 44N80P
IXFX 44N80P
,
20..120 /4.5..25
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13.10 Nm/lb.in.
1040
± 30
± 40
300
800
800
100
150
260
3.4
44
22
80
10
10
5
± 200
190
Max.
5.0
1.5
50
V/ns
N/lb
mA
mΩ
mJ
° C
° C
nA
μA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
TO-264 (IXFK)
Features
Advantages
PLUS247 (IXFX)
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
G = Gate
S = Source
Easy to mount
Space savings
High power density
V
I
R
t
G
D25
rr
DS(on)
DSS
D
S
= 800
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
TAB = Drain
D = Drain
190 mΩ Ω Ω Ω Ω
250
44
(TAB)
(TAB)
DS99478E(01/06)
ns
A
V
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IXFK44N80P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXFK 44N80P IXFX 44N80P Maximum Ratings 800 = 1 MΩ 800 GS ± 30 ± 100 3.4 ≤ DSS 1040 -55 ... +150 150 -55 ... +150 300 260 1.13.10 Nm/lb.in. 20..120 /4.5..25 10 ...
Page 2
... Pulse test, t ≤ 300 μs, duty cycle d ≤ Note 1: IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min ...
Page 3
... Volts D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 2 10V GS 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved C 100 = 10V 2.6 = 10V 2.4 7V 2.2 6V 2.0 1.8 1.6 1.4 5V 1.2 1.0 0.8 0 D25 50 ° 125 ...
Page 4
... T = 125 0.3 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 100000 f = 1MHz C iss 10000 C oss 1000 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 ° 0.9 1 1.1 1.2 1.3 Fig. 13. Maxim um Transient Therm al 1 ...