IXTQ30N50L2 IXYS, IXTQ30N50L2 Datasheet - Page 4

• Manufacturer Part Number: IXTQ30N50L2
• Description: MOSFET N-CH 30A 500V TO-3P
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTQ30N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 8100pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.200
• Ciss, Typ, (pf): 8100
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 500
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
90
80
70
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
0
100
5
0
0.4
10
3.5
0
4.0
0.5
f
4.5
5
= 1 MHz
Fig. 9. Forward Voltage Drop of
5.0
Fig. 7. Input Admittance
10
0.6
Fig. 11. Capacitance
T
5.5
J
Intrinsic Diode
= 125ºC
V
V
15
6.0
V
GS
SD
0.7
DS
- Volts
- Volts
- Volts
6.5
20
T
J
0.8
7.0
= 125ºC
- 40ºC
25ºC
25
7.5
C oss
C rss
C iss
0.9
T
J
8.0
30
= 25ºC
8.5
1.0
35
9.0
9.5
1.1
40
1.00
0.10
0.01
30
27
24
21
18
15
12
16
14
12
10
0.0001
9
6
3
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
5
= 15A
= 10mA
Fig. 12. Maximum Transient Thermal
= 250V
50
0.001
IXTH30N50L2 IXTQ30N50L2
10
Fig. 8. Transconductance
100
15
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
I
- NanoCoulombs
0.01
D
20
Impedance
- Amperes
150
25
200
0.1
30
IXTT30N50L2
35
250
T
125ºC
J
40
1
= - 40ºC
25ºC
300
45
350
10
50