IXFX74N50P2 IXYS, IXFX74N50P2 Datasheet - Page 2
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IXFX74N50P2
Manufacturer Part Number
IXFX74N50P2
Description
MOSFET N-CH 500V 74A PLUS247
Manufacturer
IXYS
Series
PolarP2™ HiPerFET™r
Type
PolarP2 HiPerFETr
Datasheet
1.IXFX74N50P2.pdf
(4 pages)
Specifications of IXFX74N50P2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
74A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 25V
Power - Max
1400W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Product
MOSFET Gate Drivers
Rise Time
11 ns
Fall Time
11 ns
Supply Current
74 A
Maximum Power Dissipation
1400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
60 ns
Maximum Turn-on Delay Time
25 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
74 A
Output Voltage
500 V
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
74
Rds(on), Max, Tj=25°c, (?)
0.077
Ciss, Typ, (pf)
9900
Qg, Typ, (nc)
165
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1400
Rthjc, Max, (ºc/w)
0.089
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Gate Input Resistance
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 37A, -di/dt = 100A/μs
= 80V, V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
S
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
D
DS
GS
DS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
Min.
40
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
9900
1015
13.0
0.15
Typ.
Typ.
165
1.3
1.9
25
11
60
70
11
44
67
65
0.089 °C/W
Max.
250
296
Max.
1.4
6,404,065 B1
6,534,343
6,583,505
74
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 Outline
PLUS247
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
6,727,585
6,771,478 B2 7,071,537
Dim.
1
2
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
20.80
15.75
19.81
25.91
19.81
20.32
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
TM
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Millimeter
5.45 BSC
Millimeter
5.46 BSC
Outline
IXFK74N50P2
7,005,734 B2
7,063,975 B2
IXFX74N50P2
26.16
19.96
20.83
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Terminals: 1 - Gate
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Terminals: 1 - Gate
Inches
2 - Drain
3 - Source
7,157,338B2
Max.
1.030
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
2 - Drain
3 - Source
4 - Drain