IXFR18N90P IXYS, IXFR18N90P Datasheet - Page 2

• Manufacturer Part Number: IXFR18N90P
• Description: MOSFET NCH 900V 10.5A ISOPLUS247
• Manufacturer: IXYS
• Series: Polar™r
• Type: Polar Power MOSFETr

Specifications of IXFR18N90P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 660 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 6V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Input Capacitance (ciss) @ Vds: 5230pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Product: MOSFET Gate Drivers
• Rise Time: 33 ns
• Fall Time: 44 ns
• Supply Current: 9 A
• Maximum Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 60 ns
• Maximum Turn-on Delay Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 10.5 A
• Output Voltage: 900 V
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 10.5
• Rds(on), Max, Tj=25°c, (?): 0.66
• Ciss, Typ, (pf): 5230
• Qg, Typ, (nc): 97
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 200
• Rthjc, Max, (ºc/w): 0.62
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Rhange Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
Gate input resistance
V
V
V
Repetitive, pulse width limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 9A, -di/dt = 100A/μs
= I
= 100V, V
= 2Ω (External)
= 10V, V
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
GS
DS
= 9A, Note 1
= 0.5 • V
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 9A
= 9A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
6
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
5230
10.8
Typ.
0.15
366
1.0
10
1.2
53
33
60
44
97
30
40
40
0.62 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
300 ns
1.5
18
72
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS247
Terminals: 1 - Gate
Dim.
6,727,585
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
6,771,478 B2 7,071,537
1
2
1
2
20.80
15.75
19.81
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
IXFR18N90P
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
TM
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Outline
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190