IXFH40N30Q IXYS, IXFH40N30Q Datasheet
IXFH40N30Q
Manufacturer Part Number
IXFH40N30Q
Description
MOSFET N-CH 300V 40A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH40N30Q.pdf
(2 pages)
Specifications of IXFH40N30Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Forward Transconductance Gfs (max / Min)
30 s
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.08
Ciss, Typ, (pf)
3560
Qg, Typ, (nc)
92
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH40N30Q
Manufacturer:
AD
Quantity:
3 340
Company:
Part Number:
IXFH40N30Q
Manufacturer:
IXYS
Quantity:
3 500
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
DM
AR
DSS
D25
GSS
J
JM
stg
L
DSS
GS(th)
DSS
DGR
GS
GSM
AR
AS
D
DS(on)
d
J
= 25 C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
S
V
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
, di/dt 100 A/ s, V
GS
DSS
, I
D
D
DC
D
= 4 mA
=
, V
= 0.5 I
G
= 2
DS
= 0
A
D25
GS
= 1 M
DD
T
T
TO-247
TO-268
J
J
V
= 25 C
= 125 C
DSS
g
JM
,
2 %
Min. Typ.
300
2.0
Characteristic Values
-55 ... +150
-55 ... +150
IXFH 40N30Q
IXFT 40N30Q
Maximum Ratings
1.13/10 Nm/lb.in.
300
300
160
300
150
300
1.0
20
30
40
40
30
5
6
4
100
Max.
25
80
4
1
V/ns
m
mA
mJ
nA
W
g
g
C
C
C
C
V
V
A
V
V
V
V
A
A
A
J
Features
• IXYS advanced low Q
• International standard packages
• Low gate charge and capacitance
• Low R
• Unclamped Inductive Switching (UIS)
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
TO-268 (IXFT) Case Style
TO-247 AD (IXFH)
G = Gate
S = Source
- easier to drive
- faster switching
rated
flammability classification
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
G
S
= 300
=
=
£ 250 ns
D = Drain
TAB = Drain
40
80 mW
g
process
98504A (6/99)
(TAB)
(TAB)
V
A
1 - 2
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IXFH40N30Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 40N30Q IXFT 40N30Q g Maximum Ratings 300 = 1 M 300 160 1 DSS 300 -55 ... +150 150 -55 ...
Page 2
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 40N30Q IXFT 40N30Q TO-247 AD (IXFH) Outline ...