IXFC26N50P IXYS, IXFC26N50P Datasheet - Page 5

• Manufacturer Part Number: IXFC26N50P
• Description: MOSFET N-CH 500V 15A ISOPLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFC26N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 28 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 130000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.26
• Ciss, Typ, (pf): 3600
• Qg, Typ, (nc): 65
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 130
• Rthjc, Max, (ºc/w): 0.95
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFC 26N50P
Fig. 13. Maximum Transient Thermal Resistance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
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IXYS REF: T_26N50P (6J) 02-09-06-B.xls