IXFH26N60P IXYS, IXFH26N60P Datasheet - Page 5

• Manufacturer Part Number: IXFH26N60P
• Description: MOSFET N-CH 600V 26A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH26N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 4150pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 26 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 26
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 4150
• Qg, Typ, (nc): 72
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 460
• Rthjc, Max, (ºc/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-247 AD (IXFH) Outline
PLUS220SMD (IXFV_S) Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
1
4.7
2.2
2.2
1.0
Millimeter
.4
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
3
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
TO-268 (IXFT) Outline
IXFH 26N60P
IXFV 26N60P IXFV 26N60PS
PLUS220 (IXFV) Outline
IXFT 26N60P