IXTC160N10T IXYS, IXTC160N10T Datasheet - Page 2

• Manufacturer Part Number: IXTC160N10T
• Description: MOSFET N-CH 100V 83A ISOPLUS220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTC160N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 132nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 83 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 83
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 6600
• Qg, Typ, (nc): 132
• Trr, Typ, (ns): 60
• Trr, Max, (ns): -
• Pd, (w): 140
• Rthjc, Max, (k/w): 1.06
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
S
SM
d(on)
r
d(off)
f
Notes: 1.
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
thJC
thCS
SD
iss
oss
rss
g(on)
gs
gd
The product presented herein is under development.
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;
Test Conditions
V
V
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, -di/dt = 100 A/μs
= 25 A, V
= 30 V, V
= 5 Ω (External)
= 10 V; I
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
D
DS
GS
DS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
4,835,592
4,850,072
4,881,106
= 0.5 V
DSS
DSS
JM
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 25 A
= 25 A
(T
T
J
J
5,049,961
5,063,307
5,187,117
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
The Technical Specifications
Min.
Min.
5,237,481
5,381,025
5,486,715
65
Characteristic Values
Characteristic Values
6600
Typ.
Typ.
135
132
102
880
0.5
60
33
61
49
42
37
40
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
1.06°C/W
160
430
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
ISOPLUS220 (IXTC) Outline
6,683,344
6,710,405 B2
6,710,463
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, and 3.
6,727,585
6,759,692
6,771,478 B2
1.Gate
3.Sourc
IXTC160N10T
e
7,005,734 B2
7,063,975 B2
7,071,537
2. Drain