IXTQ10P50P IXYS, IXTQ10P50P Datasheet - Page 2
![MOSFET P-CH 500V 10A TO-3P](/photos/5/55/55518/ixtq10p50p_sml.jpg)
IXTQ10P50P
Manufacturer Part Number
IXTQ10P50P
Description
MOSFET P-CH 500V 10A TO-3P
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTP10P50P.pdf
(6 pages)
Specifications of IXTQ10P50P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2840pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1 Ohms
Drain-source Breakdown Voltage
- 500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-500
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
1
Ciss, Typ, (pf)
2670
Qg, Typ, (nc)
50
Trr, Typ, (ns)
414
Pd, (w)
300
Rthjc, Max, (k/w)
0.5
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
I
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S
SM
d(on)
r
d(off)
f
rr
RM
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
(TO-3P & TO-247)
(TO-220)
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= - 5A, V
= - 5A, -di/dt = -100A/μs
= -100V, V
= -10V, I
= 0V, V
= -10V, V
= 3.3Ω (External)
= -10V, V
= 0V
GS
DS
D
= 0V, Note 1
DS
DS
GS
= - 25V, f = 1MHz
= 0.5 • I
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
= 0V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0 .5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
6.5
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
2840
- 28.6
0.21
0.50
Typ.
275
Typ.
5.90
11
42
20
28
52
44
50
17
18
414
0.42 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
- 10
- 40
Max.
- 3
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2