IXTP6N50D2 IXYS, IXTP6N50D2 Datasheet - Page 2

• Manufacturer Part Number: IXTP6N50D2
• Description: MOSFET N-CH 500V 6A TO220AB
• Manufacturer: IXYS

Specifications of IXTP6N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 96nC @ 5V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 500
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 0.5
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 2800
• Crss, Typ, (pf): 64
• Qg, Typ, (nc): 96
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.41
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
TO-263 (IXTA) Outline
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
I
I
V
Test Conditions
Test Conditions
TO-247
F
F
DS
GS
GS
GS
DS
R
G
= 6A, V
= 3A, -di/dt = 100A/μs
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 30V, I
= -10V, V
= ±5V, V
= 2.4Ω (External)
= 5V, V
= 400V, I
1. Gate
2. Drain
3. Source
4. Drain
GS
DS
D
DS
= -10V, Note 1
GS
= 3A, Note 1
DS
D
= 250V, I
= 250V, I
= 0.45A, T
= -10V
4,835,592
4,881,106
= 25V, f = 1MHz
D
D
4,931,844
5,017,508
5,034,796
= 3A
= 3A
C
= 75°C, Tp = 5s
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
5,049,961
5,063,307
5,187,117
14.61
Min.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Millimeter
10.41
15.88
Max.
BSC
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
2.79
1.40
1.78
5,237,481
5,381,025
5,486,715
Characteristic Values
2.8
Min.
Characteristic Values
Min.
180
Min.
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
Inches
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
2800
0.50
Typ.
0.21
255
4.5
350
Typ.
2.8
Typ.
64
28
72
82
43
96
11
48
0.8
16
Max.
0.41 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.3
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA6N50D2 IXTP6N50D2
TO-220 (IXTP) Outline
TO-247 (IXTH) AD Outline
1 = Gate
2 = Drain
3 = Source
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
7,005,734 B2
7,063,975 B2
IXTH6N50D2
2 - Drain
4 - Drain
7,157,338B2