IXTP170N075T2 IXYS, IXTP170N075T2 Datasheet - Page 2

• Manufacturer Part Number: IXTP170N075T2
• Description: MOSFET N-CH 75V 170A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTP170N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 6860pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 170
• Rds(on), Max, Tj=25°c, (?): 0.0054
• Ciss, Typ, (pf): 6860
• Qg, Typ, (nc): 109
• Trr, Typ, (ns): 63
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. On through-hole packages, R
location must be 5mm or less from the package body.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
Repetitive, Pulse width limited by T
V
Resistive Switching Times
V
R
V
V
I
I
-di/dt = 100A/μs
V
Test Conditions
TO-220
Test Conditions
F
F
DS
GS
GS
GS
R
GS
G
= 85A, V
= 50A, V
= 37V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 3.3Ω (External)
= 0V, V
= 10V, V
= 0V
= 10V, V
GS
GS
DS
D
DS
DS
= 0V
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 0.5 • I
= 0.5 • I
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
40
6,162,665
6,259,123 B1
6,306,728 B1
6860
Typ.
Typ.
0.50
150
810
148
109
4.8
63
70
25
19
37
25
19
11
Max.
Max.
0.42 °C/W
170
680
1.0
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
IXTA170N075T2
IXTP170N075T2
7,005,734 B2
7,063,975 B2
2 - Drain
4 - Drain
7,157,338B2