IRLH5036TR2PBF International Rectifier, IRLH5036TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRLH5036TR2PBF
• Description: MOSFET N-CH 60V 100A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLH5036TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 150µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 5360pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 250 W
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLH5036TR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
12
10
Fig 12. On-Resistance vs. Gate Voltage
8
6
4
2
Fig 15a. Switching Time Test Circuit
2
R G
20V
V GS, Gate -to -Source Voltage (V)
V DS
4
t p
6
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
8
10
T J = 125°C
T J = 25°C
15V
12
I D = 50A
DRIVER
14
+
-
+
-
V DD
16
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
1200
1000
800
600
400
200
Fig 14b. Unclamped Inductive Waveforms
0
90%
V
25
10%
V
I
DS
AS
GS
Starting T J , Junction Temperature (°C)
Fig 15b. Switching Time Waveforms
50
t
d(on)
t
75
t p
r
100
TOP
BOTTOM 50A
t
d(off)
V
(BR)DSS
125
18A
t
I D
15A
f
150
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