IXTA3N50D2 IXYS, IXTA3N50D2 Datasheet - Page 3

• Manufacturer Part Number: IXTA3N50D2
• Description: MOSFET N-CH 500V 3A D2PAK
• Manufacturer: IXYS

Specifications of IXTA3N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Gate Charge (qg) @ Vgs: 40nC @ 5V
• Input Capacitance (ciss) @ Vds: 1070pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vds, Max, (v): 500
• Id(on), Min, (a): 3
• Rds(on), Max, (?): 1.5
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 1070
• Crss, Typ, (pf): 24
• Qg, Typ, (nc): 40
• Pd, (w): 125
• Rthjc, Max, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2009 IXYS CORPORATION, All Rights Reserved
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0
0
0.5
Fig. 3. Output Characteristics @ T
1
Fig. 1. Output Characteristics @ T
100
Fig. 5. Drain Current @ T
1.0
2
200
V
V
1.5
DS
DS
3
V
V
- Volts
- Volts
DS
GS
300
- Volts
= 5V
3V
2V
1V
V
2.0
GS
4
= 5V
-1V
1V
0V
-2V
-3V
2V
400
J
= 100ºC
2.5
5
J
J
-1V
-2V
-3V
0V
= 125ºC
= 25ºC
V
GS
500
= -2.75V
3.0
6
-3.00V
-3.25V
-3.50V
-3.75V
-4.00V
3.5
600
7
1.E+00
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
16
14
12
10
8
6
4
2
0
-4.2
0
0
Fig. 2. Extended Output Characteristics @ T
-4.0
Fig. 6. Dynamic Resistance vs. Gate Voltage
100
5
-3.8
Fig. 4. Drain Current @ T
-3.6
200
10
T
J
V
= 100ºC
DS
-3.4
V
V
DS
GS
- Volts
300
15
- Volts
- Volts
-3.2
-3.0
V
400
T
20
J
IXTP3N50D2
IXTA3N50D2
GS
J
= 25ºC
= 25ºC
∆
= 5V
V
3V
DS
-1V
-2V
2V
1V
0V
-2.8
= 350V - 100V
V
GS
J
500
25
= - 2.50V
= 25ºC
- 2.75V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
-2.6
-2.4
600
30