IXTA7N60P IXYS, IXTA7N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTA7N60P
Manufacturer Part Number
IXTA7N60P
Description
MOSFET N-CH 600V 7A D2-PAK
Specifications of IXTA7N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5.5V @ 100µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Forward Transconductance Gfs (max / Min)
7 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
7.0
Rds(on), Max, Tj=25°c, (?)
1.1
Ciss, Typ, (pf)
1080
Qg, Typ, (nc)
20
Trr, Typ, (ns)
500
Pd, (w)
150
Rthjc, Max, (k/w)
0.83
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 100µA
= 250 µA
, V
G
= 0.5 I
= 18 Ω
DS
= 0
D25
(TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTA 7N60P
IXTP 7N60P
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±40
400
150
150
300
260
±30
14
20
10
7
7
4
3
±100
Max.
5.5
50
1.1
5
V/ns
mJ
mJ
° C
° C
° C
nA
µA
µA
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-220 (IXTP)
TO-263 (IXTA)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G = Gate
S = Source
DSS
DS(on)
G
D
G
= 600
=
S
≤ ≤ ≤ ≤ ≤ 1.1
S
D = Drain
TAB = Drain
7
DS99320E(03/06)
(TAB)
(TAB)
A
V
Ω Ω Ω Ω Ω
Related parts for IXTA7N60P
IXTA7N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 7N60P IXTP 7N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 400 ≤ DSS 150 -55 ... +150 150 -55 ... +150 300 260 1 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 V R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. ...
... Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 2 10V 2.4 GS 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 2.6 2.4 2.2 1.8 6V 1.6 1.4 1.2 0.8 5V 0.6 0 º 125 C J º IXTA 7N60P IXTP 7N60P Fig. 2. Extended Output Characteristics º ...
... Fig. 9. Sour ce Cur Source -To-Drain V oltage º 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0.8 0 Fig. 12. M axim um Tr ans ie nt The rm al 1.00 ...
Related keywords
ixta76n075t ixta72n20t IXTA7N60P datasheet IXTA7N60P data sheet IXTA7N60P pdf datasheet IXTA7N60P component IXTA7N60P part IXTA7N60P distributor IXTA7N60P RoHS IXTA7N60P datasheet download
