IXTA120N04T2 IXYS, IXTA120N04T2 Datasheet - Page 5

• Manufacturer Part Number: IXTA120N04T2
• Description: MOSFET N-CH 40V 120A TO-263
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTA120N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 3240pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0061 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.0061
• Ciss, Typ, (pf): 3240
• Qg, Typ, (nc): 58
• Trr, Typ, (ns): 35
• Pd, (w): 200
• Rthjc, Max, (k/w): 0.75
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
16
14
12
10
24
22
20
18
16
14
12
10
11
10
8
6
4
2
0
8
9
8
7
6
5
4
3
2
1
20
4
25
t
T
V
r
J
DS
= 125ºC, V
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
35
= 20V
30
6
Rise Time vs. Junction Temperature
Fig. 17. Resistive Turn-off
45
Fig. 15. Resistive Turn-on
40
8
t
d(on)
GS
Fig. 13. Resistive Turn-on
= 10V
55
T
- - - -
50
J
10
R
- Degrees Centigrade
G
I
D
65
- Ohms
- Amperes
T
I
60
12
D
J
= 125ºC, 25ºC
= 60A, 120A
75
t
R
V
f
DS
G
= 5Ω, V
70
14
= 20V
85
I
D
= 120A
GS
80
16
95
I
t
d(off)
= 10V
D
= 60A
R
V
V
GS
DS
G
105
- - - -
90
18
= 5Ω
= 10V
= 20V
115
100
20
28
26
24
22
20
18
16
14
12
18
17
16
15
14
13
12
11
10
125
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
9
8
7
0
11
10
9
8
7
6
5
4
3
2
25
4
20
Switching Times vs. Junction Temperature
t
T
V
t
R
V
f
J
f
DS
DS
G
I
= 125ºC, V
D
= 5Ω, V
35
Switching Times vs. Gate Resistance
= 20V
R
V
V
= 20V
= 60A
GS
DS
G
6
30
= 5Ω
= 10V
= 20V
45
GS
Fig. 16. Resistive Turn-off
Fig. 18. Resistive Turn-off
t
t
d(off)
d(off)
GS
8
Rise Time vs. Drain Current
= 10V
Fig. 14. Resistive Turn-on
40
I
55
= 10V
T
D
- - - -
J
- - - -
= 120A
- Degrees Centigrade
10
65
I
50
R
D
G
- Amperes
- Ohms
I
12
D
75
= 60A
60
T
85
J
14
T
= 125ºC
J
= 25ºC
70
IXTA120N04T2
IXTP120N04T2
95
16
105
80
I
18
D
115
= 120A
90
125
20
90
80
70
60
50
40
30
20
10
0
28
26
24
22
20
18
16
14
12
10
8
100