IRFZ44NPBF International Rectifier, IRFZ44NPBF Datasheet - Page 3

MOSFET N-CH 55V 49A TO-220AB

IRFZ44NPBF

Manufacturer Part Number
IRFZ44NPBF
Description
MOSFET N-CH 55V 49A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFZ44NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1470pF @ 25V
Power - Max
94W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
49 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
94 W
Resistance, Drain To Source On
17.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
44 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
19 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0175Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
49A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
41 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFZ44NPBF

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1000
1000
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100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4
TOP
BOTTOM
V
5
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6
1
T = 25 C
J
7
4.5V
°
8
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 175 C
10
J
= 25V
9
°
°
10
100
11
1000
100
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
49A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100

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