IRFU2307ZPBF International Rectifier, IRFU2307ZPBF Datasheet - Page 6

• Manufacturer Part Number: IRFU2307ZPBF
• Description: MOSFET N-CH 75V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU2307ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 53A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 12.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 4V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage vs. Temperature
500
400
300
200
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
TOP
BOTTOM
125
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100 125 150 175
I D = 1.0A
ID = 1.0mA
I D = 250µA
I D = 100µA
150
4.6A
3.4A
32A
I D
175