IXTY1R6N50D2 IXYS, IXTY1R6N50D2 Datasheet - Page 5

• Manufacturer Part Number: IXTY1R6N50D2
• Description: MOSFET N-CH 500V 1.6A DPAK
• Manufacturer: IXYS

Specifications of IXTY1R6N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 2.3 Ohm @ 800mA, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Gate Charge (qg) @ Vgs: 23.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 645pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Vds, Max, (v): 500
• Id(on), Min, (a): 1.6
• Rds(on), Max, (?): 2.3
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 645
• Crss, Typ, (pf): 16.5
• Qg, Typ, (nc): 23.7
• Pd, (w): 100
• Rthjc, Max, (ºc/w): -
• Package Style: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

© 2009 IXYS CORPORATION, All Rights Reserved
10,000
1,000
10.00
10.0
1.00
0.10
0.01
2.00
100
1.0
0.1
10
0.00001
10
0
R
DS(on)
T
T
Single Pulse
f
J
C
= 1 MHz
= 150ºC
= 25ºC
5
Limit
Fig. 15. Forward-Bias Safe Operating Area
10
Fig. 13. Capacitance
0.0001
15
@ T
V
V
DS
DS
C
100
- Volts
20
- Volts
= 25ºC
25
Fig. 17. Maximum Transient Thermal Resistance
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
C rss
C iss
C oss
DC
35
100µs
1ms
10ms
100ms
Pulse Width - Seconds
1,000
40
0.01
10.0
1.0
0.1
-1
-2
-3
-4
-5
5
4
3
2
1
0
10
0
R
T
T
Single Pulse
V
I
I
DS(on)
J
C
D
G
DS
= 150ºC
= 75ºC
= 0.8A
= 10mA
IXTY1R6N50D2 IXTA1R6N50D2
= 250V
Limit
Fig. 16. Forward-Bias Safe Operating Area
5
0.1
Fig. 14. Gate Charge
Q
10
G
@ T
- NanoCoulombs
V
DS
C
100
- Volts
= 75ºC
IXTP1R6N50D2
15
1
DC
IXYS REF: T_1R6N50D2(2C)8-14-09
20
25µs
100µs
1ms
10ms
100ms
1,000
10
25