IRFZ34NLPBF International Rectifier, IRFZ34NLPBF Datasheet - Page 3

• Manufacturer Part Number: IRFZ34NLPBF
• Description: MOSFET N-CH 55V 29A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ34NLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Current, Drain: 29 A
• Gate Charge, Total: 34 nC
• Package Type: TO-262
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.04 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 31 ns
• Time, Turn-on Delay: 7 ns
• Transconductance, Forward: 6.5 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Mounting Style: Through Hole
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ34NLPBF

1000
100
100
10
10
1
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
DS
T = 25°C
J
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
6
T = 175°C
J
7
4.5V
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
C
10
= 25V
8
9
100
10
A
A
1000
100
10
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM 4.5V
I
D
= 26A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Drain-to-Source Voltage (V)
0
20
1
40
60
4.5V
20µs PULSE WIDTH
T = 175°C
80 100 120 140 160 180
C
10
V
GS
= 10V
100
A
A