IXTP32P05T IXYS, IXTP32P05T Datasheet - Page 4

• Manufacturer Part Number: IXTP32P05T
• Description: MOSFET P-CH 50V 32A TO-220
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTP32P05T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1975pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): -50
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 1975
• Qg, Typ, (nc): 46
• Trr, Typ, (ns): 26
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
-100
100
-90
-80
-70
-60
-50
-40
-30
-20
-10
-35
-30
-25
-20
-15
-10
-5
0
0
-0.4
-3.0
0
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
-5
-3.5
-0.6
C rss
-10
-4.0
T
J
Fig. 7. Input Admittance
-0.8
= 125ºC
C oss
Fig. 11. Capacitance
-15
T
V
J
-4.5
DS
V
V
= 125ºC
GS
SD
- 40ºC
- Volts
25ºC
-1.0
-20
- Volts
- Volts
C iss
-5.0
T
J
= 25ºC
-25
-1.2
-5.5
-30
-1.4
-6.0
-35
-6.5
-1.6
-40
-
-
-10
100
-
24
20
16
12
-9
-8
-7
-6
-5
-4
-3
-2
-1
10
0
8
4
0
1
-
0
0
1
T
T
Single Pulse
V
I
I
J
C
R
D
G
DS
= 150ºC
5
= 25ºC
DS(on)
-4
= -16A
= -1mA
= - 25V
Fig. 12. Forward-Bias Safe Operating Area
Limit
10
-8
IXTY32P05T IXTA32P05T
Fig. 8. Transconductance
15
-12
Fig. 10. Gate Charge
Q
I
20
D
G
V
- Amperes
DS
- NanoCoulombs
-16
- Volts
-
25
10
-20
30
-24
IXTP32P05T
35
T
J
-28
= - 40ºC
40
125ºC
25ºC
-32
25µs
100µs
1ms
10ms
100ms
45
-
100
-36
50