IRFU6215PBF International Rectifier, IRFU6215PBF Datasheet - Page 5

• Manufacturer Part Number: IRFU6215PBF
• Description: MOSFET P-CH 150V 13A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU6215PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 13 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU6215PBF

www.irf.com
0.01
14
12
10
0.1
8
6
4
2
0
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.10
0.05
0.20
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
(THERMAL RESPONSE)
T , Case Temperature
C
Case Temperature
SINGLE PULSE
75
0.0001
100
125
( C)
t , Rectangular Pulse Duration (sec)
1
°
150
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
10%
90%
V
GS
DS
0.01
t
d(on)
Notes:
1. Duty factor D = t
2. Peak T = P
IRFR/U6215PbF
≤ 0.1 %
t
≤ 1
r
J
DM
x Z
0.1
1
/ t
thJC
2
t
P
d(off)
DM
+ T
C
t
t
1
f
t 2
+
-
5
1
A