IXTP5N50P IXYS, IXTP5N50P Datasheet - Page 2

MOSFET N-CH 500V 4.8A TO-220

IXTP5N50P

Manufacturer Part Number
IXTP5N50P
Description
MOSFET N-CH 500V 4.8A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTP5N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
5.5V @ 50µA
Gate Charge (qg) @ Vgs
12.6nC @ 10V
Input Capacitance (ciss) @ Vds
620pF @ 25V
Power - Max
89W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Forward Transconductance Gfs (max / Min)
4.7 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.8 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
5.0
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
620
Qg, Typ, (nc)
12.6
Trr, Typ, (ns)
400
Pd, (w)
89
Rthjc, Max, (k/w)
1.4
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP5N50P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTP5N50P
Manufacturer:
IXYS
Quantity:
18 000
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
SM
d(on)
r
d(off)
f
rr
IXYS MOSFETs and IGBTs are covered by 4,835,592
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
thJC
thCS
one or moreof the following U.S. patents:
g(on)
gs
gd
Pins: 1 - Gate
TO-252 (IXTY) Outline
3 - Source
Test Conditions
V
V
V
R
V
(TO-220)
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 5 A, -di/dt = 100 A/μs,
= 100 V, V
= 10 V; I
= 30 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
2,4 - Drain
GS
= 0 V, Pulse test
D
DS
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
= 0 V
4,850,072
4,881,106
D25
, pulse test
Dim.
DSS
A1
A2
D1
E1
b1
b2
c1
e1
L1
L2
L3
DSS
A
D
E
H
b
c
e
L
, I
4,931,844
5,017,508
5,034,796
, I
D
Millimeter
D
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
9.40 10.42
0.51
0.64
0.89
2.54
Min. Max.
2.28 BSC
4.57 BSC
= 0.5 I
= 0.5 I
0
(T
(T
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
1.02
1.02
1.27
2.92
J
J
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
= 25°C unless otherwise specified)
D25
D25
Inches
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
0
Min.
Min.
3.0
5,237,481
5,381,025
5,486,715
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
Characteristic Values
Characteristic Values
Typ.
Typ.
12.6
0.25
620
400
4.7
6.3
4.3
5.0
72
22
26
65
24
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
1.4°C/W
1.5
15
IXTA 5N50P IXTP 5N50P
5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
3 - Source
6,727,585
6,759,692
6,771,478 B2
IXTY 5N50P
2 - Drain
4 - Drain

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