IXTA08N50D2 IXYS, IXTA08N50D2 Datasheet - Page 5

• Manufacturer Part Number: IXTA08N50D2
• Description: MOSFET N-CH 500V 800MA D2PAK
• Manufacturer: IXYS

Specifications of IXTA08N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 4.6 Ohm @ 400mA, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 800mA
• Gate Charge (qg) @ Vgs: 12.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 312pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vds, Max, (v): 500
• Id(on), Min, (a): 0.8
• Rds(on), Max, (?): 4.6
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 312
• Crss, Typ, (pf): 11
• Qg, Typ, (nc): 12.7
• Pd, (w): 60
• Rthjc, Max, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2009 IXYS CORPORATION, All Rights Reserved
1,000
10.00
1.00
0.10
0.01
10.0
100
1.0
0.1
10
0.0001
1
10
0
R
DS(on)
T
T
Single Pulse
J
C
f
= 150ºC
= 1 MHz
= 25ºC
Limit
5
Fig. 15. Forward-Bias Safe Operating Area
10
Fig. 13. Capacitance
15
@ T
0.001
V
V
DS
DS
C
100
- Volts
20
- Volts
= 25ºC
25
Fig. 17. Maximum Transient Thermal Impedance
30
C oss
C iss
C rss
DC
25µs
100µs
1ms
10ms
100ms
35
0.01
Pulse Width - Seconds
1,000
40
10.00
1.00
0.10
0.01
-1
-2
-3
-4
-5
5
4
3
2
1
0
10
0
R
V
I
I
T
T
Single Pulse
DS(on)
D
G
DS
J
C
= 400mA
= 1mA
= 150ºC
= 75ºC
0.1
= 250V
2
Limit
Fig. 16. Forward-Bias Safe Operating Area
IXTY08N50D2 IXTA08N50D2
4
Fig. 14. Gate Charge
Q
G
@ T
6
- NanoCoulombs
V
DS
C
100
- Volts
= 75ºC
1
8
IXTP08N50D2
10
DC
IXYS REF: T_08N50D2(1C)8-14-09
12
25µs
100µs
1ms
10ms
100ms
1,000
14
10