IXTP50N085T IXYS, IXTP50N085T Datasheet

MOSFET N-CH 85V 50A TO-220

IXTP50N085T

Manufacturer Part Number
IXTP50N085T
Description
MOSFET N-CH 85V 50A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTP50N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 25µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1460pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.023 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
50 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.0230
Ciss, Typ, (pf)
1460
Qg, Typ, (nc)
34
Trr, Typ, (ns)
55
Trr, Max, (ns)
-
Pd, (w)
130
Rthjc, Max, (k/w)
1.15
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
L
D25
DM
AR
GSS
DSS
L
AS
J
JM
stg
SOLD
DSS
DGR
GSM
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Package Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-252
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
GS
J
J
J
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
TM
DSS
, I
D
D
= 250 μA
D
= 25 μA
G
= 0.5 I
DS
= 18 Ω
= 0 V
D25
GS
, Notes 1, 2
= 1 MΩ
Preliminary Technical Information
DD
T
≤ V
J
= 150°C
DSS
TO-252
IXTP50N085T
IXTY50N085T
JM
Min.
2.0
85
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
± 20
0.35
130
250
130
175
300
260
85
85
50
25
10
± 100
3
3
100
Max.
4.0
23
1
V/ns
mJ
μA
nA
μA
°C
°C
°C
°C
°C
W
V
A
A
A
V
V
V
A
g
g
V
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
TO-252 (IXTY)
G = Gate
S = Source
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
TO-220 (IXTP)
DC/DC Converters and Off-line UPS
V
I
R
High Current Switching
D25
Systems
Applications
Automotive
DSS
DS(on)
G
D S
G
=
=
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
85
50
23 mΩ Ω Ω Ω Ω
DS99638 (11/06)
D (TAB)
D (TAB)
A
V

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IXTP50N085T Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTP50N085T IXTY50N085T Maximum Ratings MΩ ± TO-252 25 130 JM 10 250 ≤ DSS 130 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 3 0.35 Characteristic Values Min. ...

Page 2

... L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP50N085T IXTY50N085T TO-220 (IXTP) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC nC °C Notes: Pulse test: t ≤ 300 μs, duty cycle 1 ...

Page 3

... Value 175º 25º 100 110 120 -50 IXTP50N085T IXTY50N085T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 25A Value DS(on Junction Temperature V = 10V 50A 25A D - 100 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 5 1.4 1.6 1.8 2 10.00 1.00 0.10 0. 0.00001 IXTP50N085T IXTY50N085T Fig. 8. Transconductance 40ºC J 25ºC 150º Amperes D Fig. 10. Gate Charge V = 43V 10A 1mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance ...

Page 5

... Switching Times vs. Junction Temperature 10A d(off) = 10V 42. IXTP50N085T IXTY50N085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current = 18 Ω 10V 42. 25º 125º Amperes D Fig. 16. Resistive Turn-off I = 10A d(off Ω 10V 42. 30A 105 T - Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times v s. Gate Resistance ...

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