IXTP44N10T IXYS, IXTP44N10T Datasheet - Page 5

• Manufacturer Part Number: IXTP44N10T
• Description: MOSFET N-CH 100V 44A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP44N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4.5V @ 25µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 1262pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 44 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.03
• Ciss, Typ, (pf): 1567
• Qg, Typ, (nc): 27.4
• Trr, Typ, (ns): 60
• Trr, Max, (ns): -
• Pd, (w): 130
• Rthjc, Max, (k/w): 1.15
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
130
120
110
100
33
32
31
30
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27
26
90
80
70
60
50
40
30
20
75
70
65
60
55
50
45
40
35
30
25
20
10
15
25
I
D
Switching Times vs. Gate Resistance
12
t
T
V
= 10A
20
Switching Times vs. Drain Current
35
r
J
DS
= 125ºC, V
Rise Time vs. Junction Temperature
= 50V
14
Fig. 17. Resistive Turn-off
25
Fig. 15. Resistive Turn-on
45
Fig. 13. Resistive Turn-on
t
d(on)
16
GS
30
I
55
T
I
D
D
- - - -
J
R
= 30A
= 10V
18
- Amperes
- Degrees Centigrade
G
I
D
35
- Ohms
65
= 30A
20
T
J
40
= 25ºC
t
R
V
75
f
22
G
DS
= 18 Ω , V
= 50V
45
85
24
T
J
t
d(off)
= 125ºC
50
GS
26
95
I
- - - -
= 10V
D
R
V
V
= 10A
G
GS
DS
55
28
105
= 18 Ω
= 50V
= 10V
30
60
115
50
46
42
38
34
30
26
22
40
38
36
34
32
30
28
26
24
22
20
18
125
100
90
80
70
60
50
40
30
20
35
34
33
32
31
30
29
28
27
26
75
70
65
60
55
50
45
40
35
30
25
20
15
25
10
Switching Times vs. Junction Temperature
t
T
V
Switching Times vs. Gate Resistance
t
R
V
f
J
I
DS
35
D
20
f
= 125ºC, V
G
DS
R
V
V
12
= 10A
= 50V
G
GS
DS
= 18 Ω , V
= 50V
= 18 Ω
= 10V
= 50V
45
Fig. 18. Resistive Turn-off
25
Fig. 16. Resistive Turn-off
14
t
t
T
d(off)
d(off)
Rise Time vs. Drain Current
J
Fig. 14. Resistive Turn-on
GS
GS
- Degrees Centigrade
55
- - - -
30
- - - -
= 10V
16
= 10V
R
65
G
I
I
D
35
- Ohms
D
18
- Amperes
= 30A
75
40
20
85
IXYS REF: T_44N10T (1V) 9-15-06-A.xls
45
22
95
T
T
IXTP44N10T
IXTY44N10T
I
J
J
D
50
I
105
= 25ºC
= 125ºC
24
D
= 30A
= 10A
55
115
26
125
60
28
50
47
44
41
38
35
32
29
26
23
110
100
90
80
70
60
50
40
30
30