IRLU3715PBF International Rectifier, IRLU3715PBF Datasheet - Page 2

• Manufacturer Part Number: IRLU3715PBF
• Description: MOSFET N-CH 20V 54A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU3715PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1060pF @ 10V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 54A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 54 A
• Power Dissipation: 71 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU3715PBF

IRLR/U3715PbF
Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Static @ T
Symbol
E
I
V
∆V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
V
I
Symbol
I
I
t
Q
t
Q
I
AR
d(on)
r
d(off)
f
SM
DSS
S
rr
rr
GSS
2
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
gs
gd
oss
iss
oss
rss
g
rr
rr
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
20
26
–––
–––
–––
–––
–––
–––
–––
–––
0.022
1060 –––
–––
–––
–––
–––
–––
––– -200
–––
700
120
–––
–––
3.8
4.4
6.4
5.1
0.9
0.8
11
15
11
11
73
12
37
28
38
30
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
210
3.0
54
–––
1.3
–––
20
17
17
42
45
56
57
14
20
„
mΩ
V/°C
µA
nA
nC
ns
pF
nC
nC
ns
ns
V
V
S
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
Reference to 25°C, I
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
J
J
J
J
G
= 21A
= 21A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8Ω
= V
= 16V, V
= 16V, V
= 10V, I
= 10V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 0V, V
= 10V
= 4.5V
= 0V
GS
, I
D
S
F
DS
D
D
D
Conditions
D
= 250µA
S
GS
GS
F
Conditions
Conditions
ƒ
= 21A, V
= 21A, V
= 250µA
= 26A
= 21A
= 21A
= 21A, V
= 21A, V
= 10V
Max.
= 0V
= 0V, T
110
21
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D
GS
R
ƒ
= 1mA
ƒ
=20V
R
J
GS
=20V
= 125°C
= 0V ƒ
G
= 0V ƒ
Units
mJ
A
S
D