PSMN013-100PS,127 NXP Semiconductors, PSMN013-100PS,127 Datasheet - Page 7

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PSMN013-100PS,127

Manufacturer Part Number
PSMN013-100PS,127
Description
MOSFET N-CH 100V 68A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN013-100PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.9 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
68A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
3195pF @ 50V
Power - Max
170W
Mounting Type
Through Hole
Gate Charge Qg
59 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
68 A
Power Dissipation
170 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4976-5
NXP Semiconductors
PSMN013-100PS_2
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
DS on
(A)
I
100
D
45
35
25
15
80
60
40
20
5
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
4
0
8
2
T
j
= 175 °C
12
4
16
V
All information provided in this document is subject to legal disclaimers.
V
003a a d585
003a a d582
25 °C
GS
GS
(V)
(V)
Rev. 02 — 22 January 2010
20
6
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(S )
g
150
120
fs
90
60
30
5
4
3
2
1
0
−60
0
drain current; typical values
junction temperature
Forward transconductance as a function of
0
30
0
PSMN013-100PS
60
60
max
min
typ
90
120
120
© NXP B.V. 2010. All rights reserved.
003a a d586
003aad280
T
I
j
D
(°C)
(A)
150
180
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