IRFL210 Vishay, IRFL210 Datasheet - Page 5

• Manufacturer Part Number: IRFL210
• Description: MOSFET N-CH 200V 960MA SOT223
• Manufacturer: Vishay

Specifications of IRFL210

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 580mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 960mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.96 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL210

Document Number: 91193
S-81377-Rev. A, 30-Jun-08
91193_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
0.0
91193_11
25
10
10
0.1
10
T
-2
1
2
C
10
50
, Case Temperature (°C)
-5
0.2
0.1
0.01
0 - 0.5
0.05
0.02
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
-4
100
Single Pulse
(Thermal Response)
10
125
-3
150
t
1
, Rectangular Pulse Duration (S)
10
-2
0.1
1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
10
Notes:
1. Duty Factor, D = t
2. Peak T
IRFL210, SiHFL210
DS
t
r
j
= P
D.U.T.
P
DM
10
DM
Vishay Siliconix
R
2
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
+ T
2
t
f
+
-
10
C
www.vishay.com
V
DD
3
5