IRLI530GPBF Vishay, IRLI530GPBF Datasheet

MOSFET N-CH 100V 9.7A TO220FP

IRLI530GPBF

Manufacturer Part Number
IRLI530GPBF
Description
MOSFET N-CH 100V 9.7A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRLI530GPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 5.8A, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 5V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Transistor Polarity
N Channel
Continuous Drain Current Id
9.7A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
160mohm
Rds(on) Test Voltage Vgs
5V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLI530GPBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91311
S09-0039-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 15 A, dI/dt ≤ 140 A/µs, V
= 25 V, starting T
(Ω)
a
J
G
= 25 °C, L = 4.0 mH, R
D
c
a
a
S
DD
b
V
GS
≤ V
= 5.0 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 175 °C.
100
3.8
28
14
G
= 25 Ω, I
D
S
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.16
GS
AS
at 5.0 V
6-32 or M3 screw
= 9.7 A (see fig. 12c).
T
for 10 s
C
= 25 °C
T
T
C
C
FULLPAK220
IRLI530GPbF
SiHLI530G-E3
IRLI530G
SiHLI530G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Dist. = 4.8 mm
• Logic-Level Gate Drive
• R
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
DS(on)
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRLI530G, SiHLI530G
design,
GS
= 4 V and 5 V
- 55 to + 175
LIMIT
300
± 10
0.28
100
250
9.7
6.9
9.7
4.2
5.5
1.1
39
42
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRLI530GPBF Summary of contents

Page 1

... This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip single screw fixing. FULLPAK220 IRLI530GPbF SiHLI530G-E3 IRLI530G SiHLI530G = 25 °C, unless otherwise noted ° ...

Page 2

... IRLI530G, SiHLI530G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91311 S09-0039-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C IRLI530G, SiHLI530G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLI530G, SiHLI530G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91311 S09-0039-Rev. A, 19-Jan-09 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91311 S09-0039-Rev. A, 19-Jan-09 IRLI530G, SiHLI530G 5.0 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRLI530G, SiHLI530G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91311 ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91311. Document Number: 91311 S09-0039-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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