2SK3043 Panasonic - SSG, 2SK3043 Datasheet
2SK3043
Manufacturer Part Number
2SK3043
Description
MOSFET N-CH 450V 5A TO-220D
Manufacturer
Panasonic - SSG
Datasheet
1.2SK3043.pdf
(4 pages)
Specifications of 2SK3043
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.3 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5V @ 1mA
Input Capacitance (ciss) @ Vds
700pF @ 20V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220D
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3043
Manufacturer:
PANASONIC
Quantity:
8 000
Company:
Part Number:
2SK3043
Manufacturer:
Panasonic
Quantity:
12 500
Power MOSFETs
2SK3043
Silicon N-channel power MOSFET
■ Features
■ Applications
■ Absolute Maximum Ratings T
Note) * : L = 8 mH, I
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
• Avalanche energy capability guaranteed: EAS > 100 mJ
• Gate-source surrender voltage V
• High-speed switching
• No secondary breakdown
• Non-contact relay
• Solenoid drive
• Motor drive
• Control equipment
• Switching mode regulator
Short-circuit forward transfer capacitance
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Diode forward voltage
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Parameter
Parameter
L
= 5 A, 1 pulse
T
*
a
= 25°C
GSS
C
Symbol
V
V
= 25°C ± 3°C
: ±30 V guaranteed
EAS
Symbol
R
R
T
I
T
R
P
I
Y
V
C
DSS
GSS
DP
t
t
stg
I
I
V
D
C
th(ch-c)
th(ch-a)
ch
DS(on)
C
C
d(off)
D
V
d(on)
DSS
GSS
DSS
t
t
oss
= 25°C
DF
rss
iss
r
f
th
fs
−55 to +150
Rating
I
V
V
V
V
V
I
V
V
V
D
DR
±30
±10
450
100
150
DS
GS
DS
DS
GS
DS
DD
GS
±5
35
= 1 mA, V
2
= 5 A, V
SJG00020BED
= 360 V, V
= ±30 V, V
= 25 V, I
= 25 V, I
= 10 V, I
= 20 V, V
= 10 V
= 150 V, I
GS
Conditions
GS
Unit
D
D
D
mJ
°C
°C
W
GS
V
V
A
A
D
= 1 mA
= 3 A
= 3 A
= 0
GS
DS
= 0
= 3 A, R
= 0, f = 1 MHz
= 0
= 0
L
= 50 Ω
Marking Symbol: K3043
Internal Connection
1
9.9
Min
2
450
2.0
1.8
±0.3
G
3
2.54
5.08
0.8
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
φ 3.2
Typ
700
100
2.5
1.0
40
25
45
35
80
±0.1
TO-220D-A1 Package
D
S
Max
−1.2
62.5
100
5.0
1.3
3.5
±1
4.6
±0.2
0.55
Unit: mm
1: Gate
2: Drain
3: Source
°C/W
°C/W
2.9
2.6
±0.15
Unit
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
V
S
±0.2
±0.1
1
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2SK3043 Summary of contents
Page 1
... Power MOSFETs 2SK3043 Silicon N-channel power MOSFET ■ Features • Avalanche energy capability guaranteed: EAS > 100 mJ • Gate-source surrender voltage V GSS • High-speed switching • No secondary breakdown ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • ...
Page 2
... Safe operation area 100 Non repetitive pulse = 25° µ 100 µ 0.1 100 ms 0. 100 1 000 ( V ) Drain-source voltage V DS 25° Drain-source voltage V DS 25° 2 Gate-source voltage ( (2) Without heat sink ( ( 120 160 ( °C ) Ambient temperature T a V ...
Page 3
... With a 100 mm × 100 mm × heat sink 10 1 −1 10 −2 10 −4 −3 −2 − Time t (s) 400 25° 225 V 330 V 300 15 200 100 Gate charge load Q g (1) ( SJG00020BED 2SK3043 d(on d(off) D 120 = 150 25° 100 t d(off d(on Drain current ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...