IRFZ10PBF Vishay, IRFZ10PBF Datasheet - Page 6

• Manufacturer Part Number: IRFZ10PBF
• Description: MOSFET N-CH 60V 10A TO-220AB
• Manufacturer: Vishay

Specifications of IRFZ10PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 43000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 10V
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Fall Time: 19 ns
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFZ10PBF

IRFZ10, SiHFZ10
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
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to obtain
Fig. 12a - Unclamped Inductive Test Circuit
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Fig. 13a - Basic Gate Charge Waveform
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Charge
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D.U.T.
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0.01 Ω
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
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Fig. 12b - Unclamped Inductive Waveforms
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Fig. 13b - Gate Charge Test Circuit
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Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0511-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 90363
D.U.T.
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