IRF1324STRL-7PP International Rectifier, IRF1324STRL-7PP Datasheet - Page 4

• Manufacturer Part Number: IRF1324STRL-7PP
• Description: MOSFET N-CH 24V 429A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1324STRL-7PP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 429A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 252nC @ 10V
• Input Capacitance (ciss) @ Vds: 7700pF @ 19V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 429 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1324STRL-7PPTR

1000
4
100
450
400
350
300
250
200
150
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
10
50
0
Fig 11. Typical C
0.0
-5
25
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
50
0
0.5
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
75
5
T J = 25°C
1.0
OSS
100
10
Limited By Package
Stored Energy
1.5
125
15
V GS = 0V
2.0
150
20
175
2.5
25
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1000
100
900
800
700
600
500
400
300
200
100
10
32
31
30
29
28
27
26
25
24
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
0
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
1
1msec
100
10msec
100µsec
TOP
BOTTOM 160A
DC
125
10
150
I D
45A
80A
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100
175