SI7456DP-T1-E3 Vishay, SI7456DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7456DP-T1-E3
• Description: MOSFET N-CH 100V 5.7A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7456DP-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 9.3A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 5.2W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7456DP-T1-E3TR

Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71603.
www.vishay.com
4
- 0.5
- 1.0
- 1.5
0.5
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
0.0001
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
- 25
Single Pulse
Single Pulse
0
Threshold Voltage
T
J
10
25
- Temperature (°C)
-3
0.02
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
= 250 μA
0.001
75
0.05
10
100
-2
125
Square Wave Pulse Duration (s)
150
Square Wave Pulse Duration (s)
10
-1
0.01
50
40
30
20
10
1
0
0.01
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
0.1
DM
JM
- T
1
t
Time (s)
A
1
= P
S09-0271-Rev. F, 16-Feb-09
t
2
Document Number: 71603
DM
Z
10
thJA
100
thJA
t
t
1
2
(t)
= 52 °C/W
100
600
1
600