SI4483EDY-T1-E3 Vishay, SI4483EDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4483EDY-T1-E3
• Description: MOSFET P-CH 30V 10A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4483EDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SI4483EDY-T1-E3TR

Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10 -
- 25
0.05
4
Duty Cycle = 0.5
0.2
0.1
0.02
0
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10 -
1
0.1
Limited by
R
2
DS(on)
125
* V
Safe Operating Area, Junction-to-Case
Single Pulse
GS
T
*
C
> minimum V
150
= 25 °C
V
Square Wave Pulse Duration (s)
DS
10 -
- Drain-to-Source Voltage (V)
1
1
GS
at which r
DS(on)
10
1
50
40
30
20
10
0
0.01
is specified
10 ms
100 ms
1 ms
1 s
10 s
DC
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
1
T
t
A
1
Time (s)
= P
t
S-83038-Rev. D, 22-Dec-08
2
DM
Document Number: 72862
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 70 °C/W
100
600
600