DI9435T Diodes Zetex, DI9435T Datasheet

DI9435T

Manufacturer Part Number

DI9435T

Description

MOSFET P-CH 30V 5.3A 8-SOP

Manufacturer

Diodes Zetex

Datasheet

1.DI9435T.pdf (4 pages)

Specifications of DI9435T

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

50 mOhm @ 5.3A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

5.3A

Vgs(th) (max) @ Id

1.4V @ 250µA

Gate Charge (qg) @ Vgs

40nC @ 10V

Input Capacitance (ciss) @ Vds

950pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOP

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Features

Mechanical Data

Maximum Ratings

DS11503 Rev. F-4

Thermal Characteristics

Notes:

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

High Cell Density DMOS Technology

Low On-State Resistance

High Power and Current Capability

Fast Switching Speed

High Transient Tolerance

SO-8 Plastic Case

Terminal Connections: See Outline Drawing

and Internal Circuit Diagram above

1. R

defined as the solder mounting surface of the drain pins. R

1a. With 1 in

1b. With 0.04 in

1c. With 0.006 in

thermal design.

QJA

is the sum of the junction-to-case and case-to-ambient thermal resistance (R

Characteristic

of 2 oz. copper mounting pad R

25°C unless otherwise specified

of 2 oz. copper mounting pad R

Continuous (Note 1a)

Note 1a

Note 1b

Note 1a

Note 1c

Pulsed

Note 1

QJA = 50°C\W.

QJA = 105°C\W.

QJC in this instance is 25°C/W

QJA = 125°C\W.

VIEW

1 of 4

TOP

SINGLE P-CHANNEL ENHANCEMENT MODE

Symbol

, T

DSS

GSS

QJC

QJA

STG

but is dependent on the specific circuit board

QJC

FIELD EFFECT TRANSISTOR

-55 to +150

+ R

Value

±5.3

±20

QCA

-30

2.5

1.2

1.0

) where the case thermal reference is

All Dimensions in mm

Dim

DI9435

°C/W

0.939 Nominal

0.381

0.527

0.025

Unit

SO-8

Unit

0.41 Nominal

3.94

3.20

2.67

0.89

4.37

4.39

Min

0.94

°C

DI9435

0.495

0.679

0.152

Max

4.19

3.40

3.05

1.02

1.09

4.62

4.70

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DI9435T Summary of contents

Page 1

Features · High Cell Density DMOS Technology · Low On-State Resistance · High Power and Current Capability · Fast Switching Speed · High Transient Tolerance Mechanical Data · SO-8 Plastic Case · Terminal Connections: See Outline Drawing and Internal Circuit ...

Page 2

Electrical Characteristics (continued) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current T = 70°C j Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage T = 125°C j Static Drain-Source On-Resistance T = ...

Page 3

-6.0 -5.0 -25 -4.5 -20 -4.0 -15 - DRAIN-SOURCE VOLTAGE (V) DS Fig. 1, On-Region Characteristics 1 -5. - 1.4 ...

Page 4

D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 Remark: Thermal characterization performed under conditions of Note 1c. Better thermal design such as shown in Notes 1a and 1b or ...

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