DI9430T Diodes Zetex, DI9430T Datasheet - Page 2

• Manufacturer Part Number: DI9430T
• Description: MOSFET P-CH 20V 5.3A 8-SOP
• Manufacturer: Diodes Zetex

Specifications of DI9430T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 25µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1430pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: DI9430TR

Electrical Characteristics
DS11505 Rev. E-4
Note:
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
2. Pulse Test width £ 300 µs, duty cycle £ 2%.
Characteristic
T
T
T
j
j
= 125°C
= 125°C
j
= 55°C
25°C unless otherwise specified
Symbol
R
BV
V
t
I
I
t
I
C
C
D(OFF)
DS (ON)
C
I
GSSF
GSSR
D(ON)
D(ON)
Q
V
GS(th)
g
Q
DSS
Q
OSS
RSS
I
t
ISS
t
t
FS
SD
DSS
S
rr
gs
gd
r
f
g
-0.85
Min
-1.0
-3.6
-20
-15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2 of 4
0.055
0.077
0.067
0.082
0.120
1430
-1.04
Typ
-2.0
-1.7
810
375
8.0
3.0
—
—
—
—
—
13
22
66
28
38
12
—
80
0.060
0.090
0.080
0.115
0.190
Max
-100
-1.0
100
-3.0
-2.6
120
100
-2.2
-1.2
100
-10
30
60
—
—
—
—
—
—
—
—
—
Unit
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
W
A
m
A
V
V
VDS = -16V, V
V
V
VDS = V
V
V
V
V
V
VGS = -10V, V
V
V
V
f = 1.0MHz
V
V
V
V
V
(Note 2)
V
dl
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GEN
DS
GS
GS
GS
F
/dt = 100A/µs
= 0V, I
= 20V, V
= -20V, V
= -10V, I
= -10V, I
= -6.0V, I
= -4.5V, I
= -4.5V, I
= -4.5V, V
= -15V, I
= -10V, V
= -10V, I
= -10V. I
= -10V
= 0V, I
= 0V, I
= -10V, R
Test Condition
GS
D
, I
S
F
= -5.3A
= -5.3A,
= -25 µA
D
D
D
D
D
D
DS
D
D
D
DS
GS
GS
DS
= -25 µA
DS
= -5.3A
= -5.3A.
= -5.3A
= -5.3A
= -1A
GEN
= -3.6A
= -2.0A
= -2.0A
= 0V
= 0V
= 0V
= -5.0V
= 0V
= -5.0V
= 6.0W
DI9430