IRF7457TRPBF International Rectifier, IRF7457TRPBF Datasheet

MOSFET N-CH 20V 15A 8-SOIC

IRF7457TRPBF

Manufacturer Part Number
IRF7457TRPBF
Description
MOSFET N-CH 20V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7457TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 4.5V
Input Capacitance (ciss) @ Vds
3100pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.5 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
15 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
28 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7457PBFTR
IRF7457TRPBF
IRF7457TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7457TRPBF
Manufacturer:
IR
Quantity:
20 000
l
Absolute Maximum Ratings
l
l
l
l
l
Thermal Resistance
Applications
Benefits
Notes  through „ are on page 8
www.irf.com
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
D
D
DM
DS
GS
D
D
J
θJL
θJA
Converters with Synchronous Rectification
@ T
@ T
for Telecom and Industrial use
Computer Processor Power
, T
and Current
High Frequency DC-DC Isolated
High Frequency Buck Converters for
Lead-Free
Ultra-Low R
Very Low Gate Impedance
Fully Characterized Avalanche Voltage
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient „
Linear Derating Factor
Gate-to-Source Voltage
Parameter
Parameter

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
1
2
3
20V
4
DSS
Top View
Typ.
–––
–––
HEXFET
8
6
5
7
-55 to + 150
D
D
D
A
D
Max.
A
R
120
± 20
2.5
1.6
20
15
12
0.02
DS(on)
7.0mΩ
IRF7457PbF
®
Power MOSFET
Max.
20
50
max
SO-8
PD- 95032
Units
Units
W/°C
°C/W
15A
°C
W
W
I
V
A
V
D
1
10/12/04

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IRF7457TRPBF Summary of contents

Page 1

Applications High Frequency DC-DC Isolated l Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for l Computer Processor Power Lead-Free l Benefits Ultra-Low R l DS(on) Very Low Gate Impedance l Fully Characterized Avalanche Voltage ...

Page 2

IRF7457PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 2.7V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 ° ...

Page 4

IRF7457PbF 5000 1MHz iss rss 4000 oss iss 3000 C oss 2000 1000 C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE (THERMAL ...

Page 6

IRF7457PbF 0.030 0.025 VGS = 4.5V 0.020 0.015 0.010 0.005 VGS = 10V 0.000 Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: ...

Page 8

IRF7457PbF SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = ...

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