IRF7466TRPBF International Rectifier, IRF7466TRPBF Datasheet

MOSFET N-CH 30V 11A 8-SOIC

IRF7466TRPBF

Manufacturer Part Number
IRF7466TRPBF
Description
MOSFET N-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7466TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12.5 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
2100pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
16 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7466PBFTR
IRF7466TRPBF
IRF7466TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7466TRPBF
Manufacturer:
International Rectifier
Quantity:
1 806
Part Number:
IRF7466TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7466TRPBF
Quantity:
3 247
Absolute Maximum Ratings
Benefits
l
l
l
Thermal Resistance
l
l
l
www.irf.com
Applications
Notes  through
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
D
D
DM
J
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
, T
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
@T
@T
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Lead-Free
Computer Processor Power
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
are on page 8
Parameter
Parameter

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
30V
DSS
1
2
3
4
Top View
Typ.
–––
–––
HEXFET
R
8
6
5
7
12.5@V
DS(on)
-55 to + 150
D
D
D
A
D
A
Max.
± 20
0.02
9.0
2.5
1.6
30
11
90
IRF7466PbF
max(mW)
GS
®
Power MOSFET
= 10V
Max.
20
50
SO-8
11A
mW/°C
Units
Units
°C/W
I
D
°C
W
W
V
A
V
1

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IRF7466TRPBF Summary of contents

Page 1

Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on) l Fully Characterized Avalanche ...

Page 2

IRF7466PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 100 3.3V 3.0V BOTTOM 2. 2.7V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

IRF7466PbF 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

Fig 6. On-Resistance Vs. Drain Current Case Temperature ( C) C 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 (THERMAL RESPONSE) 0.01 ...

Page 6

IRF7466PbF 0.06 0. 10V 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µF ...

Page 7

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 8

IRF7466PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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