IRF8736TRPBF International Rectifier, IRF8736TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF8736TRPBF
• Description: MOSFET N-CH 30V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8736TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2315pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8736TRPBFTR

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0.01
100
0.1
10
20
16
12
Fig 9. Maximum Drain Current Vs.
1
1E-006
8
4
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
Ambient Temperature
0.02
0.10
0.05
0.01
0.20
50
T A , Ambient Temperature (°C)
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
0.01
Fig 10. Threshold Voltage Vs. Temperature
τ
J
τ
J
τ
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1
Ci= τi/Ri
τ
1
Ci
-75
i/Ri
R
1
R
1
-50
0.1
τ
2
R
τ
2
2
R
-25
2
T J , Temperature ( °C )
R
τ
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0
IRF8736PbF
τ
1
R
4
τ
25
4
R
4
4
τ
a
50
Ri (°C/W)
1.396574 0.000246
7.206851 0.037927
14.26877
27.1278
75
I D = 50µA
10
100
τι (sec)
1.0882
30.3
125 150
5
100