ZXMN10A08E6TA Diodes Zetex, ZXMN10A08E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXMN10A08E6TA
• Description: MOSFET N-CH 100V 1.5A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A08E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 405pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A08E6TR

Thermal Characteristics
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
100m
10m
120
100
80
60
40
20
10
100m
100µ
Transient Thermal Impedance
1
Single Pulse
R
Limited
D=0.5
T
D=0.2
T
DS(on)
amb
amb
V
1m
Safe Operating Area
=25°C
=25°C
DS
Drain-Source Voltage (V)
DC
10m 100m
Pulse Width (s)
1s
1
100ms
10ms
D=0.1
1ms
1
10
D=0.05
100µs
Single Pulse
10
100
100
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100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
100µ
1
0
20
Pulse Power Dissipation
1m
40
Temperature (°C)
Derating Curve
10m 100m
Diodes Incorporated
Pulse Width (s)
60
A Product Line of
80
1
100 120 140 160
Single Pulse
10
T
amb
ZXMN10A08E6
=25°C
100
© Diodes Incorporated
1k
October 2009