SI1426DH-T1-E3 Vishay, SI1426DH-T1-E3 Datasheet - Page 4

MOSFET N-CH 30V 2.8A SC70-6

SI1426DH-T1-E3

Manufacturer Part Number
SI1426DH-T1-E3
Description
MOSFET N-CH 30V 2.8A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1426DH-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.8 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
115mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1426DH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1426DH-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
62 854
Part Number:
SI1426DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1426DH-T1-E3
Quantity:
70 000
Si1426DH
Vishay Siliconix
www.vishay.com
4
–0.0
–0.2
–0.4
–0.6
–0.8
0.4
0.2
0.01
0.01
0.1
–50
0.1
2
1
2
1
10
10
–4
–4
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
Single Pulse
– Temperature (_C)
25
10
–3
50
10
I
D
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
–2
_
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
New Product
–2
10
–1
10
1
–1
30
25
20
15
10
0.001
5
0
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
0.1
– T
t
A
1
Time (sec)
1
= P
t
2
DM
1
Z
thJA
thJA
100
S-05803—Rev. A, 18-Feb-02
t
t
1
2
(t)
Document Number: 71805
=100_C/W
10
600
100
10
600

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