SI1013X-T1-E3 Vishay, SI1013X-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1013X-T1-E3
• Description: MOSFET P-CH 20V 350MA SC89-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1013X-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -350mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1013X-T1-E3TR

Si1013R/X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T
For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values.
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2
SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
GS
b
1.0
0.8
0.6
0.4
0.2
0.0
a
0.0
= 5 V thru 3 V
0.5
a
V
a
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
1.0
A
= 25 °C, unless otherwise noted)
1.5
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
SD
t
gd
fs
gs
r
f
g
2.0
A
= 25 °C, unless otherwise noted)
V
I
D
DS
 - 200 mA, V
V
2.5
DS
= - 10 V, V
1.8 V
2.5 V
2 V
V
V
V
V
= - 16 V, V
V
V
V
GS
GS
GS
I
V
V
DS
S
DS
DS
DS
DD
DS
= - 150 mA, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 10 V, I
3.0
Test Conditions
= - 5 V, V
= V
= 0 V, V
= - 16 V, V
= - 10 V, R
GS
GS
GEN
GS
= - 4.5 V, I
, I
D
GS
D
= 0 V, T
= - 4.5 V, R
GS
D
D
D
= - 250 µA
= - 250 mA
= - 350 mA
= - 300 mA
= - 150 mA
= ± 4.5 V
GS
L
GS
= - 4.5 V
= 47 
= 0 V
= 0 V
D
J
= - 250 mA
= 85 °C
g
= 10 
1000
800
600
400
200
0
0.0
- 0.45
- 700
Min.
0.5
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.0
1500
Typ.
- 0.3
- 0.8
150
450
± 1
0.8
1.2
1.8
0.4
35
11
5
9
S10-2432-Rev. D, 25-Oct-10
1.5
Document Number: 71167
T
25 °C
J
= - 55 °C
- 100
Max.
- 1.2
± 2
1.2
1.6
2.7
2.0
- 5
125 °C
2.5
Unit
mA
µA
nA
µA
pC
ns

V
S
V
3.0