AO4456 Alpha & Omega Semiconductor Inc, AO4456 Datasheet - Page 3

• Manufacturer Part Number: AO4456
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: SRFET™r

Specifications of AO4456

• Fet Type: MOSFET N-Channel, Schottky, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Input Capacitance (ciss) @ Vds: 7716pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1035-2

Rev9: March 2011
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
160
140
120
100
80
60
40
20
10
0
8
6
4
2
6
5
4
3
2
0
2
0
Figure 3: On-Resistance vs. Drain Current and Gate
10V
Figure 5: On-Resistance vs. Gate-Source Voltage
Fig 1: On-Region Characteristics (Note E)
5
1
4
6V
10
Voltage (Note E)
2
V
V
(Note E)
DS
GS
4.5V
I
V
D
(Volts)
V
(Volts)
15
GS
6
(A)
GS
=4.5V
=10V
125° C
25° C
3
V
GS
20
=3.5V
8
I
4
D
=20A
25
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10
30
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
30
25
20
15
10
1.80
1.60
1.40
1.20
1.00
0.80
5
0
1
40
0.0
0
Figure 4: On-Resistance vs. Junction Temperature
V
DS
Figure 6: Body-Diode Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
=5V
25
125° C
0.2
V
I
D
GS
=20A
125° C
=10V
50
2
Temperature (° C)
V
0.4
V
GS
75
(Note E)
SD
(Volts)
(Volts)
25° C
100
0.6
25° C
V
I
D
3
GS
=18A
125
=4.5V
0.8
17
10
18
150
5
2
0
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