... AO4419 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4419 uses advanced trench technology to provide excellent R , and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications.Standard Product AO4419 is Pb-free (meets ROHS & Sony 259 specifications). ...
... AO4419 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
... AO4419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-9. (nC) g Figure 7: Gate-Charge Characteristics 100 In descending order T =25°C, 100°C, 125°C, 150° 0.001 0.01 0.1 Time in Avalache, t Figure 9: Single Pulse Avalanche Capability 0.001 0.01 Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E) Alpha & ...