AO4435 Alpha & Omega Semiconductor Inc, AO4435 Datasheet
AO4435
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AO4435 Summary of contents
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... AO4435 30V P-Channel MOSFET General Description The AO4435/L uses advanced trench technology to provide excellent R , and ultra-low low gate charge DS(ON) with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AO4435 and AO4435L are electrically identical. ...
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... AO4435 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 -10V - (Volts) DS Figure 1: On-Region Characteristics =- =-10V =-20V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -6V 40 -4. - 1.6 1.4 1.2 1.0 0 0.6 0 Figure 4: On-Resistance vs. Junction Temperature ...
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... AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V =-10A (nC) g Figure 7: Gate-Charge Characteristics 1000 R limited DS(ON) 100 =150°C J(Max) 0.1 T =25°C A 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =75°C/W θJA 1 0.1 0.01 Single Pulse ...
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... AO4435 G ate C harge Test C ircuit & W aveform - Vds Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd -10V - Resistive Switching Test Circuit & Waveforms Vgs d(on) ...