NTS2101PT1G ON Semiconductor, NTS2101PT1G Datasheet
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NTS2101PT1G
Specifications of NTS2101PT1G
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NTS2101PT1G Summary of contents
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... T 260 L Symbol Max Units °C/W R 430 qJA R 375 qJA NTS2101PT1 NTS2101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max DS(on −4.5 V −1 − ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance CHARGES AND CAPACITANCES Input Capacitance ...
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TYPICAL ELECTRICAL CHARACTERISTICS 8 25°C −2 6 −2 −4 4.0 2 1.0 2.0 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. −4.5 V ...
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TYPICAL ELECTRICAL CHARACTERISTICS 2.0 4 TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge NTS2101P 4 ...
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... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...