NTZS3151PT1G ON Semiconductor, NTZS3151PT1G Datasheet - Page 2

• Manufacturer Part Number: NTZS3151PT1G
• Description: MOSFET P-CH 20V 860MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZS3151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 860mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 458pF @ 16V
• Power - Max: 170mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.86 A
• Power Dissipation: 170 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZS3151PT1GOSTR

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Temperature Coefficient
Temperature Coefficient
Parameter
(T
J
V
V
= 25°C unless otherwise noted.)
V
(BR)DSS
Symbol
V
Q
GS(TH)
R
Q
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
I
C
G(TOT)
Q
I
DS(on)
Q
d(ON)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
ISS
t
t
FS
GS
GD
SD
r
f
/T
/T
J
J
http://onsemi.com
V
V
V
V
V
V
V
I
V
V
S
GS
I
V
V
GS
GS
GS
GS
GS
GS
D
V
V
V
DS
V
DS
= −360 mA
DS
GS
GS
GS
GS
GS
= −950 mA, R
= 0 V, dI
= −4.5 V, V
= −4.5 V, V
= −4.5 V, I
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −10 V, I
= −20 V
Test Condition
= 0 V, V
= V
= 0 V,
= 0 V
2
= 0 V, I
= 0 V, f = 1.0 MHz,
I
I
V
D
S
DS
DS
= −770 mA
= −360 mA
, I
S
= −16 V
/dt = 100 A/ms,
D
GS
D
D
D
D
D
D
= −250 mA
DS
DD
= −250 mA
= −810 mA
= −950 mA
= −770 mA
= −670 mA
= −200 mA
= "8.0 V
G
T
T
= −10 V;
= −10 V,
T
T
= 6.0 W
J
J
J
J
= 125°C
= 125°C
= 25°C
= 25°C
−0.45
Min
−20
−0.64
23.7
−0.5
10.5
Typ
−13
120
144
195
458
112
2.4
3.1
5.6
0.6
0.9
1.2
5.0
61
38
12
18
"100
Max
−1.0
−5.0
−1.0
−0.9
150
142
200
240
mV/°C
mV/°C
Unit
mW
nA
nC
mA
pF
ns
ns
V
V
S
V