BSS123LT1G ON Semiconductor, BSS123LT1G Datasheet - Page 3

• Manufacturer Part Number: BSS123LT1G
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of BSS123LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.17 A
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 80 Millimhos
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 VDC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 6Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 170mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS123LT1GOSTR

2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
−60
T
1.0
A
V
I
D
= 25 C
GS
= 200 mA
Figure 3. Temperature versus Static
= 10 V
2.0
V
−20
DS
Drain−Source On−Resistance
Figure 1. Ohmic Region
, DRAN SOURCE VOLTAGE (VOLTS)
3.0
T, TEMPERATURE ( C)
4.0
+20
5.0
TYPICAL ELECTRICAL CHARACTERISTICS
6.0
+60
7.0
V
8.0
GS
+100
= 10 V
http://onsemi.com
9 V
8 V
7 V
6 V
5 V
4 V
3 V
9.0
BSS123LT1
10
+140
3
1.05
1.10
0.95
0.85
0.75
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
−60
0
V
1.0
DS
Figure 4. Temperature versus Gate
= 10 V
Figure 2. Transfer Characteristics
−20
2.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
3.0
Threshold Voltage
T, TEMPERATURE ( C)
+20
4.0
5.0
−55 C
+60
6.0
7.0
+100
V
I
D
8.0
DS
125 C
= 1.0 mA
= V
9.0
GS
25 C
+140
10