2N7002WT1G ON Semiconductor, 2N7002WT1G Datasheet

2N7002WT1G

Manufacturer Part Number

2N7002WT1G

Description

MOSFET N-CH SGL 60V 340MA SOT323

Manufacturer

ON Semiconductor

Type

Small Signalr

Datasheet

1.2N7002WT1G.pdf (5 pages)

Specifications of 2N7002WT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.6 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

310mA

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

0.7nC @ 4.5V

Input Capacitance (ciss) @ Vds

24.5pF @ 20V

Power - Max

280mW

Mounting Type

Surface Mount

Package / Case

SC-70-3, SOT-323-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.6 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.31 A

Power Dissipation

280 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

1.6Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SC-70

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N7002WT1G
2N7002WT1GOSTR

Available stocks

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Price

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2N7002W

Small Signal MOSFET

60 V, 340 mA, Single, N−Channel, SC−70

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

April, 2011 − Rev. 4

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current (t

Operating Junction and Storage

Temperature Range

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

Gate−Source ESD Rating

(HBM, Method 3015)

Junction−to−Ambient − Steady State

(Note 1)

Junction−to−Ambient − t ≤ 5 s (Note 1)

Compliant

ESD Protected

Low R

Small Footprint Surface Mount Package

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Low Side Load Switch

Level Shift Circuits

DC−DC Converter

Portable Applications i.e. DSC, PDA, Cell Phone, etc.

sq [1 oz] including traces)

Steady State

t < 5 s

Steady State

t < 5 s

(1/8″ from case for 10 s)

DS(on)

Characteristic

Rating

= 10 ms)

= 25°C unless otherwise stated)

= 25°C

= 85°C

= 25°C

= 85°C

Symbol

ESD

, T

DSS

qJA

STG

−55 to

Value

+150

Max

±20

310

220

340

240

280

330

250

260

900

450

375

1.4

°C/W

Unit

°C

†For information on tape and reel specifications,

2N7002WT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC−70/SOT−323

(BR)DSS

60 V

Device

CASE 419

(Note: Microdot may be in either location)

STYLE 8

Source

Gate

ORDERING INFORMATION

SIMPLIFIED SCHEMATIC

http://onsemi.com

(Pb−Free)

2.5 W @ 4.5 V

Package

1.6 W @ 10 V

= Device Code

= Date Code

= Pb−Free Package

SC−70

DS(on)

(Top View)

Publication Order Number:

MARKING DIAGRAM

& PIN ASSIGNMENT

MAX

Gate

3000/Tape & Reel

71 MG

Shipping

Drain

2N7002W/D

(Note 1)

340 mA

Source

MAX

†

Related parts for 2N7002WT1G

2N7002WT1G Summary of contents

Page 1

... J STG +150 I 250 260 °C L ESD 900 V 2N7002WT1G Symbol Max Unit †For information on tape and reel specifications, 450 °C/W R qJA including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. R 375 qJA 1 http://onsemi.com ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

9.0 V 8.0 V 1.2 7.0 V 6.0 V 0.8 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 125°C ...

Page 4

C iss 20 C oss 10 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 85° 25° 0.1 0.01 ...

Page 5

... SCALE 10:1 details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81− ...

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